FORMING ELECTRICAL INTERCONNECTIONS THROUGH SEMICONDUCTOR WAFERSANTHONY TR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5340-5349; BIBL. 13 REF.Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

TECHNOLOGIE SOS: L'HEURE DE VERITELILEN H.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 22-24Article

A HIGH-PERFORMANCE LSI TECHNOLOGY: CMOS SILICON-ON-SAPPHIRESMITH DEH.1981; GEC J. SCI. TECHNOL. (1972); ISSN 0302-2587; GBR; DA. 1981; VOL. 47; NO 2; PP. 55-61; BIBL. 6 REF.Article

ANALYSIS OF THE SWITCHING SPEED OF A SUBMICROMETER-GATE CMOS/SOS INVERTERMAYER DC; PERKINS WE.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 886-888; BIBL. 8 REF.Article

ELECTRICAL CHARACTERISTICS OF DEPLETRIN-TYPE SOS MOS DEVICESONGA S; KO WH; HATANAKA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1675-1682; BIBL. 12 REF.Article

APPLICATION OF LASER ANNEALING TECHNIQUES TO INCREASE CHANNEL MOBILITY IN SILICON ON SAPPHIRE TRANSISTORSYARON G; HESS LD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 3; PP. 220-222; BIBL. 10 REF.Article

SUBMICROMETER POLYSILICON GATE CMOS/SOS TECHNOLOGYIPRI AC; SOKOLOSKI JC; FLATLEY DW et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1275-1279; BIBL. 9 REF.Article

FORTSCHRITTE UND PROBLEME DER "VERY LARGE SCALE INTEGRATION" (VLSI)-TECHNOLOGIE = PROGRES ET PROBLEMES DE LA TECHNOLOGIE VLSIFRIEDRICH H; WIDMANN D.1979; ELEKTROTECH. U. MASCH.-BAU; AUT; DA. 1979; VOL. 97; NO 3; PP. 86-93; BIBL. 7 REF.Article

NON-HOMOGENEOUS ELECTRICAL TRANSPORT THROUGH SILICON-ON-SAPPHIRE THIN FILMS-EVIDENCE OF THE INTERNAL STRESS INFLUENCEJONG HYUN LEE; CRISTOLOUEANU S; CHOVET A et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 9; PP. 947-953; BIBL. 27 REF.Article

STANDARD CELL APPROACH FOR GENERATING CUSTOM CMOS/SOS DEVICES USING A FULLY AUTOMATIC LAYOUT PROGRAMFELLER A; NOTO R; SMITH AM et al.1981; IEEE CIRCUITS SYST. MAG.; ISSN 0163-6812; USA; DA. 1981; VOL. 3; NO 3; PP. 9-13; BIBL. 1 REF.Article

ET POURQUOI PAS UN MICROPROCESSEUR 16 BITS EN SOS.LILEN H.1981; ELECTRON. IND.; FRA; DA. 1981; NO 9; PP. 35-36Article

THEORY OF THE FULLY DEPLETED SOS/MOS TRANSISTORWORLEY ER.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1107-1111; BIBL. 11 REF.Article

X-RAY ROCKING CURVES FOR SILICON-ON-SAPPHIRE CHARACTERIZATIONTRILHE J; BOREL J; GONCHOND JP et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2003-2006; BIBL. 8 REF.Article

LES PERFORMANCES DU SOS POUR UN MICROCOMPRESSEUR 16 BITS1980; INTER ELECTRON.; ISSN 0020-5036; FRA; DA. 1980; NO 314; PP. 29Article

AN X-BAND SOS RESISTIVE GATE-INSULATOR-SEMICONDUCTOR (RIS) SWITCHSIANG PING KWOK.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 442-448; BIBL. 5 REF.Article

IMPROVEMENT IN GATE BREAKDOWN VOLTAGE FOR SOS DEVICESSHUTO K; KATO K; HASEGAWA M et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 242-245; BIBL. 6 REF.Article

A MODEL FOR THE SUBMICROMETER N-CHANNEL DEEP-DEPLETION SOS/MOSFETJERDONEK RT; BANDY WR; BIRNBAUM J et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1566-1570; BIBL. 13 REF.Article

ANALYSIS OF CHANNEL NOISE AND THRESHOLD VOLTAGE IN SOS-MOS TRANSISTORS IN THE TEMPERATURE RANGE OF 77-300 KTOUBOUL A; SODINI D; RIGAUD D et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 335-343; BIBL. 8 REF.Article

IMMA APPLICATIONS TO ION IMPLANTATION IN SILICON-ON-SAPPHIREPANCHOLY RK; YU TAK YOUNG M.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2256-2261; BIBL. 11 REF.Article

SENSITIVITY LIMITES IN SOS MAGNETODIODESLUTES OS; NUSSBAUM PS; AADLAND OS et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2156-2157; BIBL. 7 REF.Article

DEVICE TECHNOLOGY. ADVANCED DEVICE AND PROCESSING CONCEPTS1979; IEDM 1979. INTERNATIONAL ELECTRON DEVICES MEETING/1979/WASHINGTON DC; USA; NEW YORK: IEEE; DA. 1979; PP. 575-604; BIBL. DISSEM.Conference Paper

LASER ANNEALING TO ROUND THE EDGES OF SILICON STRUCTURESWU CP; SCHNABLE GL.1979; R.C.A. REV.; USA; DA. 1979; VOL. 40; NO 3; PP. 339-344; BIBL. 1 REF.Article

SOS SPECIAL ISSUE: NONVOLATILE MEMORY TECHNOLOGY1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 8; PP. 1005-1074; BIBL. DISSEM.Article

A MODEL OF CONDUCTION IN INHOMOGENEOUS DEGENERATE SEMICONDUCTORS: APPLICATION TO SILICON-ON-SAPPHIRE FILMSROBERT JL; DUSSEAU JM; GIRARD P et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1903-1908; BIBL. 11 REF.Article